FDD6796A Fairchild Semiconductor, FDD6796A Datasheet - Page 5

• Manufacturer Part Number: FDD6796A
• Description: MOSFET N-CH 25V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6796A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1780pF @ 13V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6796ATR

©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
Typical Characteristics
0.0005
0.001
0.01
0.01
0.1
0.1
1
2
10
1
2
10
-5
-4
DUTY CYCLE-DESCENDING ORDER
DUTY CYCLE-DESCENDING ORDER
D = 0.5
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
Figure 14.
Figure 13. Junction-to-Case Transient Thermal Response Curve
10
-3
10
SINGLE PULSE
R
θ
-4
JC
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 3.6
= 25 °C unless otherwise noted
o
C/W
10
SINGLE PULSE
R
(
Note 1b
θ
JA
-2
= 96
t, RECTANGULAR PULSE DURATION (sec)
)
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
10
-3
10
-1
5
1
10
-2
NOTES:
DUTY FACTOR: D = t
PEAK T
NOTES:
DUTY FACTOR: D = t
PEAK T
J
10
J
= P
= P
DM
DM
x Z
x Z
10
P
θJA
P
θJC
DM
DM
-1
1
1
/t
/t
x R
x R
2
2
θJA
θJc
100
t
t
1
1
+ T
+ T
t
t
2
2
A
C
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1