FDD6796A Fairchild Semiconductor, FDD6796A Datasheet - Page 3

• Manufacturer Part Number: FDD6796A
• Description: MOSFET N-CH 25V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6796A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1780pF @ 13V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6796ATR

©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
Typical Characteristics
150
120
150
120
1.8
1.6
1.4
1.2
1.0
0.8
0.6
90
60
30
90
60
30
Figure 3. Normalized On Resistance
0
Figure 1.
0
0.0
-75 -50 -25
Figure 5. Transfer Characteristics
0
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
DS
I
V
D
= 10 V
GS
vs Junction Temperature
= 20 A
= 3 V
= 10 V
1
0.5
V
T
V
DS
J
On Region Characteristics
GS
,
T
,
JUNCTION TEMPERATURE (
J
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
= 25
0
T
J
2
V
= 175
o
1.0
GS
C
25
= 6 V
V
µ
o
GS
C
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
3
= 8 V
T
1.5
J
T
75 100 125 150 175
= 25 °C unless otherwise noted
J
= -55
4
o
C
o
C )
2.0
V
V
V
GS
GS
GS
5
= 4.5 V
= 3.5 V
= 4 V
µ
s
2.5
6
3
200
100
0.1
10
20
15
10
4
3
2
1
0
1
5
0
0.2
Figure 2.
Figure 4.
0
Forward Voltage vs Source Current
2
vs Drain Current and Gate Voltage
Figure 6.
T
V
J
GS
V
= 175
SD
= 0 V
0.4
30
, BODY DIODE FORWARD VOLTAGE (V)
V
V
Normalized On-Resistance
GS
On-Resistance vs Gate to
GS
o
C
Source Voltage
4
= 3.5 V
Source to Drain Diode
,
GATE TO SOURCE VOLTAGE (V)
T
I
D
J
,
= 25
DRAIN CURRENT (A)
0.6
60
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
GS
0.8
= 4 V
= 8 V
90
I
D
= 20 A
V
T
V
GS
J
GS
8
= -55
120
1.0
= 6 V
T
= 10 V
V
T
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J
GS
J
= 150
= 25
µ
o
= 4.5 V
C
s
o
µ
o
C
s
C
150
1.2
10