SPP04N50C3 Infineon Technologies, SPP04N50C3 Datasheet - Page 4

• Manufacturer Part Number: SPP04N50C3
• Description: MOSFET N-CH 560V 4.5A TO-220AB
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP04N50C3

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 3.9V @ 200µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.95 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014478; SPP04N50C3IN; SPP04N50C3X; SPP04N50C3XK; SPP04N50C3XTIN; SPP04N50C3XTIN

Rev. 2.9
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Reverse recovery charge
Peak reverse recovery current
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2010-12-21