... DS(on) 0.060 0.077 4 TO-252 G D Top View Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulse Power Dissipation Operating Junction and Storage Temperature Range ...
... SUD19P06-60 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
... SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 1.6 GS 1.3 1.0 0.7 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Case Temperature (°C) C Maximum Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69253. Document Number: 69253 S-72191-Rev. A, 22-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD19P06-60 Vishay Siliconix 1 10 100 www.vishay.com 5 ...
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...