SUD19P06-60-GE3 Vishay, SUD19P06-60-GE3 Datasheet - Page 4
![MOSFET P-CH 60V 18.3A TO-252](/photos/5/46/54657/pkg_5347_sml.jpg)
SUD19P06-60-GE3
Manufacturer Part Number
SUD19P06-60-GE3
Description
MOSFET P-CH 60V 18.3A TO-252
Manufacturer
Vishay
Datasheet
1.SUD19P06-60-GE3.pdf
(6 pages)
Specifications of SUD19P06-60-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18.3 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-19A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
77mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUD19P06-60-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD19P06-60-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
81 434
SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
www.vishay.com
4
1.9
1.6
1.3
1.0
0.7
0.4
25
20
15
10
5
0
- 50
0
0.01
0.1
On-Resistance vs. Junction Temperature
I
D
2
1
10
= 10 A
- 25
-4
25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
0
Single Pulse
Maximum Drain Current
T
J
vs. Case Temperature
C
- Junction Temperature (°C)
- Case Temperature (°C)
50
25
10
V
-3
GS
75
50
= 10 V
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
100
10
125
-2
125
New Product
150
150
Square Wave Pulse Duration (s)
10
-1
0.001
0.01
100
0.1
10
40
10
1
1
0.1
0.0
1
Limited by r
* V
GS
Single Pulse
Source-Drain Diode Forward Voltage
T
C
0.3
T
= 25 °C
V
J
minimum V
1
= 150 °C
DS
V
DS(on)
SD
- Drain-to-Source Voltage (V)
Safe Operating Area
BVDSS Limited
- Source-to-Drain Voltage (V)
1
*
0.6
0
GS
10
at which r
S-72191-Rev. A, 22-Oct-07
0.9
Document Number: 69253
DS(on)
T
J
100
= 25 °C
100
100 ms
1 s
10 s
DC
is specified
1.2
1000
6
1.5
0
0