SUD19P06-60-GE3 Vishay, SUD19P06-60-GE3 Datasheet - Page 3

• Manufacturer Part Number: SUD19P06-60-GE3
• Description: MOSFET P-CH 60V 18.3A TO-252
• Manufacturer: Vishay

Specifications of SUD19P06-60-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.3 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 77mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD19P06-60-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69253
S-72191-Rev. A, 22-Oct-07
1800
1500
1200
900
600
300
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0
0
0
0
C
rss
10
5
V
2
V
V
DS
DS
GS
Output Characteristics
V
C
GS
-
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
Transconductance
10
20
D
= 10 thru 5 V
r
i a
Capacitance
- n
4
o t
S -
30
15
o
u
c r
C
e
iss
6
T
V
C
o
20
40
a t l
= - 55 °C
125 °C
g
25 °C
e
(
) V
8
25
50
4 V
3 V
10
30
60
New Product
0.12
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
20
16
12
5
0
8
4
0
0.0
0
0
V
I
0.5
D
DS
= 10 A
On-Resistance vs. Drain Current
5
= 30 V
10
V
1.0
GS
Transfer Characteristics
V
Q
GS
g
- Gate-to-Source Voltage (V)
I
1.5
D
- Total Gate Charge (nC)
10
= 4.5 V
- Drain Current (A)
Gate Charge
20
2.0
T
25 °C
C
= 125 °C
SUD19P06-60
15
Vishay Siliconix
2.5
30
V
3.0
GS
20
= 10 V
www.vishay.com
3.5
- 55 °C
40
25
4.0
4.5
30
50
3