SI3458DV-T1-E3 Vishay, SI3458DV-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI3458DV-T1-E3
• Description: MOSFET N-CH 60V 3.2A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3458DV-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3458DV-T1-E3TR

Si3458DV
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Rating Characteristics
Continuous Current
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
b
Symbol
R
V
I
t
t
I
I
V
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
g
Q
R
SM
I
t
t
DS
t
SD
S
rr
gd
fs
gs
r
f
g
g
V
V
DS
I
DS
D
I
≅ 1 A, V
= 48 V, V
F
= 30 V, V
V
V
V
V
V
V
V
V
= 1.7 A, dI/dt = 100 A/µs
V
DS
I
DS
DS
S
GS
DS
DD
DS
DS
GS
Test Conditions
= 1.7 A, V
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 4.5 V, I
= 48 V, V
= 5 V, V
= 30 V, R
= 10 V, I
GEN
GS
GS
GS
, I
= 0 V, T
= 10 V, R
= 10 V, I
D
GS
D
GS
D
GS
= 250 µA
D
D
GS
= 250 µA
L
= ± 20 V
= 3.2 A
= 2.8 A
= 3.2 A
= 10 V
= 30 Ω
= 0 V
= 0 V
J
D
= 150 °C
g
= 3.2 A
= 6 Ω
Min.
60
10
1
1
0.085
0.110
Typ.
S09-0765-Rev. E, 04-May-09
4.0
2.0
10
10
20
10
50
8
8
Document Number: 70859
± 100
Max.
0.10
0.13
3.9
1.7
1.2
50
16
20
20
40
20
15
90
1
Unit
nA
µA
nC
ns
ns
Ω
Ω
V
A
S
A
V