SI3458DV-T1-E3 Vishay, SI3458DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3458DV-T1-E3
• Description: MOSFET N-CH 60V 3.2A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3458DV-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3458DV-T1-E3TR

Si3458DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
20
10
0.01
1
0.1
- 50
0.0
2
1
10 -
www.vishay.com/ppg?70859.
0.05
4
Duty Cycle = 0.5
0.02
- 25
0.1
0.2
Source-Drain Diode Forward Voltage
Single Pulse
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
10 -
25
I
- Temperature (°C)
T
D
J
= 250 µA
3
= 150 °C
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10 -
T
100
J
2
= 25 °C
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10 -
1
0.20
0.16
0.12
0.08
0.04
0.00
1
25
20
15
10
5
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 3.2 A
0.01
2
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
- Gate-to-Source Voltage (V)
Single Pulse Power
DM
JM
0.1
-
T
4
A
t
1
Time (s)
= P
t
S09-0765-Rev. E, 04-May-09
2
DM
1
Z
Document Number: 70859
thJA
thJA
100
6
t
t
(t)
1
2
= 106 °C/W
10
8
100
600
600
10