SI3458DV-T1-E3 Vishay, SI3458DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3458DV-T1-E3
• Description: MOSFET N-CH 60V 3.2A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3458DV-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3458DV-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70859
S09-0765-Rev. E, 04-May-09
0.20
0.16
0.12
0.08
0.04
0.00
15
12
10
9
6
3
0
8
6
4
2
0
0
0
0
V
I
V
D
DS
GS
= 3.2 A
On-Resistance vs. Drain Current
= 30 V
= 4.5 V
3
V
1
DS
2
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
6
V
2
4
GS
V
= 10 V thru 5 V
GS
9
= 10 V
6
3
12
4 V
3 V
15
4
8
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
15
12
9
6
3
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 3.2 A
10
= 10 V
1
V
V
Transfer Characteristics
T
GS
0
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
25
Capacitance
C
2
oss
T
C
25 °C
50
= 125 °C
30
Vishay Siliconix
C
iss
3
75
Si3458DV
40
- 55 °C
www.vishay.com
100
4
50
125
150
60
5
3