SI4488DY-T1-E3 Vishay, SI4488DY-T1-E3 Datasheet

MOSFET N-CH 150V 3.5A 8-SOIC

SI4488DY-T1-E3

Manufacturer Part Number
SI4488DY-T1-E3
Description
MOSFET N-CH 150V 3.5A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI4488DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A
Power Dissipation
1560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
5A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
3.1W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4488DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4488DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4488DY-T1-E3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI4488DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4488DY-T1-E3
0
Company:
Part Number:
SI4488DY-T1-E3
Quantity:
2 250
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
Ordering Information: Si4488DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
150
(V)
G
S
S
S
0.050 at V
Si4488DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
R
DS(on)
Top View
J
a
SO-8
= 150 °C)
GS
a
(Ω)
= 10 V
N-Channel 150-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
5.0
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
G
Symbol
Symbol
T
R
R
J
Definition
TrenchFET
V
V
I
I
N-Channel MOSFET
P
, T
I
DM
thJA
thJF
AS
I
DS
GS
D
S
D
stg
D
S
®
Power MOSFETs
Typical
10 s
5.0
4.0
2.8
3.1
2.0
33
65
17
- 55 to 150
± 20
150
50
25
Steady State
Maximum
1.56
3.5
2.8
1.4
1.0
40
80
21
Vishay Siliconix
Si4488DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4488DY-T1-E3 Summary of contents

Page 1

... 150 GS SO Top View Ordering Information: Si4488DY-T1-E3 (Lead (Pb)-free) Si4488DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4488DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71240 S09-0705-Rev. C, 27-Apr-09 3000 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si4488DY Vishay Siliconix C iss C 500 rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 2.0 1.5 1.0 0.5 0.0 ...

Page 4

... Si4488DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 I 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 0.01 0.1 1 Time (s) Single Pulse Power ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71240. Document Number: 71240 S09-0705-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4488DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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