SI4488DY-T1-E3 Vishay, SI4488DY-T1-E3 Datasheet
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SI4488DY-T1-E3
Specifications of SI4488DY-T1-E3
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SI4488DY-T1-E3 Summary of contents
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... 150 GS SO Top View Ordering Information: Si4488DY-T1-E3 (Lead (Pb)-free) Si4488DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si4488DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71240 S09-0705-Rev. C, 27-Apr-09 3000 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si4488DY Vishay Siliconix C iss C 500 rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 2.0 1.5 1.0 0.5 0.0 ...
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... Si4488DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 I 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 0.01 0.1 1 Time (s) Single Pulse Power ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71240. Document Number: 71240 S09-0705-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4488DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...
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