SI4488DY-T1-E3/BKN Siliconix / Vishay, SI4488DY-T1-E3/BKN Datasheet

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SI4488DY-T1-E3/BKN

Manufacturer Part Number
SI4488DY-T1-E3/BKN
Description
MOSFET; SOIC8 150V N-Channel Trench
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI4488DY-T1-E3/BKN

Channel Type
N
Current, Drain
5.00 A
Fall Time
15 ns
Gate Charge, Total
36 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
SO-8
Polarization
Dual N-Channel
Power Dissipation
1.4 W
Resistance, Drain To Source On
0.500 Ohm
Temperature, Operating, Maximum
+150 –55 to +150
Temperature, Operating, Minimum
–55 °C
Thermal Resistance, Junction To Ambient
40 °C/W
Time, Rise
11 ns
Time, Turn-off Delay
33 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
18 S
Voltage, Breakdown, Drain To Source
150 V
Voltage, Drain To Source
150 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
Ordering Information: Si4488DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
150
(V)
G
S
S
S
0.050 at V
Si4488DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
R
DS(on)
Top View
J
a
SO-8
= 150 °C)
GS
a
(Ω)
= 10 V
N-Channel 150-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
5.0
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
G
Symbol
Symbol
T
R
R
J
Definition
TrenchFET
V
V
I
I
N-Channel MOSFET
P
, T
I
DM
thJA
thJF
AS
I
DS
GS
D
S
D
stg
D
S
®
Power MOSFETs
Typical
10 s
5.0
4.0
2.8
3.1
2.0
33
65
17
- 55 to 150
± 20
150
50
25
Steady State
Maximum
1.56
3.5
2.8
1.4
1.0
40
80
21
Vishay Siliconix
Si4488DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4488DY-T1-E3/BKN Summary of contents

Page 1

... 150 GS SO Top View Ordering Information: Si4488DY-T1-E3 (Lead (Pb)-free) Si4488DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4488DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71240 S09-0705-Rev. C, 27-Apr-09 3000 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si4488DY Vishay Siliconix C iss C 500 rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 2.0 1.5 1.0 0.5 0.0 ...

Page 4

... Si4488DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 I 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 0.01 0.1 1 Time (s) Single Pulse Power ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71240. Document Number: 71240 S09-0705-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4488DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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