ZXMN3A01FTA Diodes Zetex, ZXMN3A01FTA Datasheet - Page 3

• Manufacturer Part Number: ZXMN3A01FTA
• Description: MOSFET N-CH 30V 1.8A SOT23-3
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMN3A01FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.12Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2A
• Power Dissipation: 806mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3A01FTR

ISSUE 2 - JULY 2002
100m
10m
200
150
100
10
50
100m
100µ 1m
0
1
R
Limited
Single Pulse
Transient Thermal Impedance
DS(on)
D=0.5
T
D=0.2
T
amb
amb
V
=25°C
DC
=25°C
DS
Safe Operating Area
Drain-Source Voltage (V)
1s
10m 100m
Pulse Width (s)
100ms
1
10ms
1
D=0.1
1ms
D=0.05
Single Pulse
100µs
10
10
CHARACTERISTICS
100
1k
3
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100µ 1m
1
0
20
Pulse Power Dissipation
40
Temperature (°C)
10m 100m
Derating Curve
Pulse Width (s)
60
80
ZXMN3A01F
1
100 120 140 160
Single Pulse
10
T
amb
=25°C
100
1k