ZXMN3A01FTA Diodes Zetex, ZXMN3A01FTA Datasheet - Page 4

• Manufacturer Part Number: ZXMN3A01FTA
• Description: MOSFET N-CH 30V 1.8A SOT23-3
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMN3A01FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.12Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2A
• Power Dissipation: 806mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3A01FTR

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3A01F
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
(at T
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
A
= 25°C unless otherwise stated).
2% .
4
MIN.
30
1
0.106
TYP. MAX. UNIT CONDITIONS.
0.85
17.7
13.0
190
3.5
1.7
2.3
6.6
2.9
2.3
3.9
0.6
0.9
38
20
0.12
0.18
0.95
100
0.5
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=2.5A
=2.5A
GS
=250 A, V
=250 A, V
=25°C, I
=25°C, I
(
ISSUE 2 - JULY 2002
=30V, V
=10V, I
=4.5V, I
=4.5V,I
=25 V, V
=15V,V
=15V,V
=0V
6.0 , V
= 20V, V
=15V, I
S
F
D
D
GS
GS
=2.5A,
=1.7A,
GS
D
D
GS
GS
DS
GS
=2.5A
=2.5A
=2.0A
=2.5A
DS
=5V,
=10V,
=0V
=10V
= V
=0V
=0V,
=0V
GS