ZXMN3A01FTA Diodes Zetex, ZXMN3A01FTA Datasheet - Page 6

• Manufacturer Part Number: ZXMN3A01FTA
• Description: MOSFET N-CH 30V 1.8A SOT23-3
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMN3A01FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.12Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2A
• Power Dissipation: 806mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3A01FTR

ZXMN3A01F
300
250
200
150
100
50
Basic Gate Charge Waveform
0
0.1
Switching Time Waveforms
Capacitance v Drain-Source Voltage
V
DS
- Drain - Source Voltage (V)
1
C
ISS
TYPICAL CHARACTERISTICS
C
OSS
C
V
f = 1MHz
RSS
GS
10
= 0V
6
10
8
6
4
2
0
0
Gate-Source Voltage v Gate Charge
Switching Time Test Circuit
I
D
Gate Charge Test Circuit
= 2.5A
1
Q - Charge (nC)
2
V
DS
= 15V
ISSUE 2 - JULY 2002
3
4