FDFMA2P853T Fairchild Semiconductor, FDFMA2P853T Datasheet - Page 2

• Manufacturer Part Number: FDFMA2P853T
• Description: MOSFET P-CH 20V 3A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P853T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDFMA2P853T Rev.B1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Schottky Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
I
I
V
V
DSS
GSS
∆V
d(on)
r
d(off)
f
S
rr
R
R
DS(on)
FS
GS(th)
SD
F
F
∆T
∆T
iss
oss
rss
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Leakage
Reverse Leakage
Forward Voltage
Forward Voltage
Parameter
T
J
= 25 °C unless otherwise noted
V
V
I
I
V
f = 1.0 MHz
I
I
V
V
V
I
V
V
V
V
V
V
V
V
V
I
F
F
F
D
D
D
T
R
R
DS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DD
GS
GS
= 500 mA
= 1 A
J
= –3.0 A, di/dt = 100 A/µs
= –250 µA, V
= –250 µA, referenced to 25 °C
= –250 µA, referenced to 25 °C
= 5 V
= 20 V
= 125 °C
= –10 V, I
= –10 V, V
= 0 V, I
= –16 V, V
= ±8 V, V
= V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, I
= –5 V, I
= –10 V, I
= –4.5 V, R
= –4.5 V
DS
2
, I
Test Conditions
S
D
= –1.1 A
D
D
DS
D
GS
= –250 µA
GS
D
D
D
D
= –3.0 A
GS
GEN
= –3.0 A
= –1.0 A
= –3.0 A
= –2.5 A
= –1.0 A
= –3.0 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
(Note 2)
= 25 °C
= 125 °C
= 25 °C
= 85 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
–0.4
Min
–20
–0.7
–0.8
120
172
435
118
0.49
Typ
–12
45
90
80
0.8
0.9
17
9.9
2.3
9.9
0.3
2.3
0.4
0.3
0.5
11
15
2
7
6
9
6
4
±100
–1.3
Max
–1.1
–1.2
0.46
0.35
0.55
0.54
120
160
240
160
100
–1
50
10
10
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18
19
27
12
1
6
mV/°C
mV/°C
Units
mΩ
mA
mA
mA
µA
pF
pF
pF
nC
nA
nC
nC
nC
ns
µA
µA
ns
ns
ns
ns
V
S
V
A
V
V
V
V
V