FDFMA2P853T Fairchild Semiconductor, FDFMA2P853T Datasheet - Page 4
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FDFMA2P853T
Manufacturer Part Number
FDFMA2P853T
Description
MOSFET P-CH 20V 3A 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDFMA2P853T.pdf
(8 pages)
Specifications of FDFMA2P853T
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDFMA2P853T Rev.B1
Typical Characteristics
1.4
1.3
1.2
1.1
1.0
0.9
0.8
Figure 3. Normalized On- Resistance
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Figure 1.
-50
0
0
Figure 5. Transfer Characteristics
PULSE DURATION = 300
DUTY CYCLE = 2% MAX
V
I
V
D
DS
GS
= -3.0 A
-25
vs Junction Temperature
-V
= -5 V
= -4.5 V
DS
0.5
0.5
T
,
J
On-Region Characteristics
,
DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 300
DUTY CYCLE = 2% MAX
-V
0
JUNCTION TEMPERATURE (
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
25
= 125
V
V
V
1.0
V
1.0
GS
GS
GS
GS
= -4.5 V
= -3.5 V
= -2.5 V
= -3 V
o
50
µ
C
s
T
1.5
1.5
J
75
= 25 °C unless otherwise noted
T
J
µ
s
= -55
100
T
o
J
V
V
C )
V
2.0
= 25
o
2.0
GS
GS
C
GS
= -1.8 V
= -1.5 V
= -2 V
125
o
C
150
2.5
2.5
4
0.0001
0.001
0.01
0.28
0.24
0.20
0.16
0.12
0.08
0.04
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
Figure 2.
Figure 4.
1
Forward Voltage vs Source Current
Figure 6.
vs Drain Current and Gate Voltage
0
0
0
V
GS
-V
0.2
V
= 0 V
SD
1
GS
Normalized On-Resistance
-V
, BODY DIODE FORWARD VOLTAGE (V)
On-Resistance vs Gate to
2
-I
Source Voltage
= -1.5 V
GS
T
Source to Drain Diode
D
J
,
,
= 125
DRAIN CURRENT (A)
GATE TO SOURCE VOLTAGE (V)
V
0.4
2
GS
= -3 V
o
C
4
PULSE DURATION = 300
DUTY CYCLE = 2%MAX
PULSE DURATION = 300
DUTY CYCLE = 2% MAX
I
V
0.6
D
3
GS
= -1.5 A
V
V
T
GS
= -1.8 V
T
GS
T
J
J
J
= 125
= -3.5 V
= 25
6
= -2.5 V
= -55
T
0.8
4
J
o
o
= 25
C
o
C
C
www.fairchildsemi.com
V
V
o
GS
C
GS
8
1.0
5
= -2 V
= -4.5 V
µ
µ
s
s
1.2
6
10