FDFMA2P853T Fairchild Semiconductor, FDFMA2P853T Datasheet - Page 5

• Manufacturer Part Number: FDFMA2P853T
• Description: MOSFET P-CH 20V 3A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P853T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDFMA2P853T Rev.B1
Typical Characteristics
0.001
Figure 11.
0.01
0.01
0.1
0.1
10
10
5
4
3
2
1
0
Figure 7.
1
1
0.1
0
0
I
THIS AREA IS
LIMITED BY r
D
Figure 9.
SINGLE PULSE
T
R
T
= -3.0 A
J
A
θ
JA
= MAX RATED
= 25
= 173
-V
Schottky Diode Reverse Current
1
4
o
DS
Gate Charge Characteristics
C
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
V
o
DS(on)
C/W
R
Forward Bias Safe
,
Q
REVERSE VOLTAGE (V)
g
, GATE CHARGE (nC)
1
V
8
DD
2
= -5 V
V
T
DD
T
12
3
J
T
T
J
J
J
= -15 V
= 25 °C unless otherwise noted
= 125
= 85
= 25
V
DD
10
o
o
o
C
C
C
= -10 V
16
4
100 us
100 ms
1 ms
10 ms
1 s
10 s
DC
20
50
5
5
0.001
Figure 10.
0.01
700
600
500
400
300
200
100
0.1
100
200
10
0.5
10
1
1
0
10
Figure 12.
0
0
Figure 8.
-4
C
rss
10
-V
Schottky Diode Foward Voltage
-3
4
DS
Power Dissipation
to Source Voltage
T
0.2
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
J
Single Pulse Maximum
C
10
= 125
t, PULSE WIDTH (sec)
C
V
oss
iss
F
-2
,
FORWARD VOLTAGE (V)
o
C
T
8
10
J
= 25
-1
0.4
o
C
1
12
f = 1 MHz
V
SINGLE PULSE
R
T
GS
A
θ
JA
= 25
= 0 V
10
= 173
V
0.6
GS
o
www.fairchildsemi.com
16
C
= -10 V
o
100
C/W
1000
20
0.8