ZXMN20B28KTC Diodes Zetex, ZXMN20B28KTC Datasheet - Page 3

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET N-CH 200V 1.5A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN20B28KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 750 mOhm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 358pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN20B28KTCTR

Thermal Characteristics
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
100m
10m
100
1m
60
50
40
30
20
10
10
10
100µ
100µ
1
0
1
Transient Thermal Impedance
1
25mm x 25mm
D=0.5
D=0.2
R
Limited
25mm x 25mm
DS(on)
T
Pulse Power Dissipation
1oz FR4
T
1m
1m
V
amb
Safe Operating Area
1oz FR4
DC
amb
DS
=25°C
=25°C
Drain-Source Voltage (V)
10m 100m
10m 100m
1s
Pulse Width (s)
Pulse Width (s)
100ms
25mm x 25mm
10
1oz FR4
10ms
1
1
1ms
50mm x 50mm
100µs
Single Pulse
10
10
Single Pulse
2oz FR4
T
D=0.05
amb
100
=25°C
D=0.1
100
100
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1k
1k
3 of 8
100m
10m
1m
10
35
30
25
20
15
10
100µ
1
5
0
4
3
2
1
0
Transient Thermal Impedance
1
0
D=0.5
D=0.2
50mm x 50mm
R
Limited
50mm x 50mm
DS(on)
T
20
Safe Operating Area
2oz FR4
T
1m
DC
amb
V
2oz FR4
amb
DS
=25°C
=25°C
1s
40
Temperature (°C)
Drain-Source Voltage (V)
10m 100m
Derating Curve
Pulse Width (s)
100ms
60
Diodes Incorporated
10
A Product Line of
80
10ms
50mm x 50mm
100 120 140 160
1ms
1
2oz FR4
25mm x 25mm
Single Pulse
100µs
1oz FR4
10
D=0.05
100
D=0.1
100
ZXMN20B28K
1k
© Diodes Incorporated
October 2009