ZXMN20B28KTC Diodes Zetex, ZXMN20B28KTC Datasheet - Page 4

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET N-CH 200V 1.5A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN20B28KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 750 mOhm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 358pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN20B28KTCTR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
10. Switching characteristics are independent of operating junction temperatures.
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
Q
Q
D(on)
D(off)
GS(th)
DSS
GSS
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
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Min
200
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1
0.650
0.670
0.860
6.13
17.8
76.9
44.7
57.1
Typ
177
358
1.6
1.4
6.1
8.1
1.4
3.9
50
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0.750
0.780
0.950
±100
Max
500
2.5
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Diodes Incorporated
A Product Line of
Unit
nA
nA
μC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
di/dt = 100A/μs
V
f = 1MHz
V
I
V
I
D
D
S
S
D
D
DS
GS
GS
GS
DS
DS
DS
DD
= 250μA, V
= 5.5A, V
= 6.5A, V
= 6.5A
= 250μA, V
= 6.5A, R
= 200V, V
= 30V, I
= 25V, V
= 120V, V
= ±20V, V
= 10V, I
= 5V, I
= 100V, V
Test Condition
ZXMN20B28K
D
GS
GS
G
D
D
= 2.75A
GS
GS
DS
≅ 25Ω
= 2.75A
GS
= 2.75A
GS
DS
GS
= 0V
= 0V,
= 0V
= 0V
= V
= 0V
= 0V
= 5V
= 5V
© Diodes Incorporated
GS
October 2009