ZXMN20B28KTC Diodes Zetex, ZXMN20B28KTC Datasheet - Page 5

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET N-CH 200V 1.5A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN20B28KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 750 mOhm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 358pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN20B28KTCTR

Typical Characteristics
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
0.01
Typical Transfer Characteristics
0.1
0.1
On-Resistance v Drain Current
10
10
0.01
1
1
1
T = 25°C
V
0.1
DS
V
V
= 10V
DS
GS
Output Characteristics
T = 150°C
Drain-Source Voltage (V)
2V
Gate-Source Voltage (V)
I
D
0.1
Drain Current (A)
2
1
1
2.5V
T = 25°C
10V
T = 25°C
3V
10
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3.5V
10
3.5V
2.5V
V
V
2V
10V
3V
GS
GS
3
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0.4
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
A Product Line of
1
0.6
50
V
I
D
GS
= 2.75A
T = 25°C
= 10V
Vgs = 0V
100
0.8
V
I
D
V
GS
10
= 250uA
GS(th)
10V
= V
R
DS(on)
2.5V
1.5V
V
DS
2V
3V
ZXMN20B28K
GS
150
1.0
© Diodes Incorporated
October 2009