HUFA76407D3S Fairchild Semiconductor, HUFA76407D3S Datasheet

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HUFA76407D3S

Manufacturer Part Number
HUFA76407D3S
Description
MOSFET N-CH 60V 12A DPAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUFA76407D3S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
92 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11.3nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
38W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
11A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETs
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
1. T
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(FLANGE)
DRAIN
J
= 25
JEDEC TO-251AA
HUFA76407D3
o
C to 150
C
C
C
C
= 25
= 25
= 135
= 135
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
o
o
C, V
C, V
o
o
GS
G
C, V
C, V
SOURCE
DRAIN
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
GATE
GS
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
SOURCE
T
Data Sheet
C
GATE
= 25
JEDEC TO-252AA
HUFA76407D3S
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
HUFA76407D3, HUFA76407D3S
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA76407D3ST.
HUFA76407D3
HUFA76407D3S
- r
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
Electrical Models
DS(ON)
DS(ON)
December 2001
J
, T
= 0.092 Ω,
= 0.107 Ω,
DGR
DSS
STG
pkg
DM
GS
D
D
D
D
D
L
TO-251AA
TO-252AA
GS
V
V
PACKAGE
GS
GS
HUFA76407D3S
Figures 6, 14, 15
Curves
HUFA76407D3,
= 10V
= 5V
-55 to 175
Figure 4
0.25
± 16
300
260
60
60
11
12
38
6
6
HUFA76407D3, HUFA76407D3S Rev. B
76407D
76407D
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
A
A
C
C
C
o
C

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HUFA76407D3S Summary of contents

Page 1

... UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUFA76407D3 HUFA76407D3S NOTE: When ordering, use the entire part number. Add the suffi obtain the TO-252AA variant in tape and reel, e.g., HUFA76407D3ST Unless Otherwise Specified = 0.092 Ω, = 10V 0.107 Ω ...

Page 2

... MIN TYP - - - - - - - - HUFA76407D3, HUFA76407D3S Rev. B MAX UNITS - µ µ A 250 ± 100 Ω 0.092 Ω 0.107 Ω 0.117 o 3.94 C/W o 100 C/W 170 132 ns 11.3 nC 6.2 nC 0.43 ...

Page 3

... RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 10V 4. 100 125 T , CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS HUFA76407D3, HUFA76407D3S Rev. B 150 175 θ 175 - T C 150 1 10 ...

Page 4

... PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 V 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUFA76407D3, HUFA76407D3S Rev + 3. 10V 12A GS D 120 160 200 o C) ...

Page 5

... I = 250µA D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE V = 30V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT 10V 30V 12A d(OFF GATE TO SOURCE RESISTANCE (Ω) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUFA76407D3, HUFA76407D3S Rev. B 120 160 200 12A d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0.01Ω DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUFA76407D3, HUFA76407D3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUFA76407D3, HUFA76407D3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUFA76407D3, HUFA76407D3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA76407D3, HUFA76407D3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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