HUFA76407D3S Fairchild Semiconductor, HUFA76407D3S Datasheet - Page 9

• Manufacturer Part Number: HUFA76407D3S
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76407D3S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
SPICE Thermal Model
REV 28June 1999
HUFA76407T
CTHERM1 th 6 4.5e-4
CTHERM2 6 5 2.5e-3
CTHERM3 5 4 1.9e-3
CTHERM4 4 3 2.6e-3
CTHERM5 3 2 5.5e-3
CTHERM6 2 tl 1.8e-2
RTHERM1 th 6 3.1e-2
RTHERM2 6 5 15.1e-2
RTHERM3 5 4 4.2e-1
RTHERM4 4 3 8.4e-1
RTHERM5 3 2 8.7e-1
RTHERM6 2 tl 1.5
SABER Thermal Model
SABER thermal model HUFA76407T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.5e-4
ctherm.ctherm2 6 5 = 2.5e-3
ctherm.ctherm3 5 4 = 1.9e-3
ctherm.ctherm4 4 3 = 2.6e-3
ctherm.ctherm5 3 2 = 5.5e-3
ctherm.ctherm6 2 tl = 1.8e-2
rtherm.rtherm1 th 6 = 3.1e-2
rtherm.rtherm2 6 5 = 15.1e-2
rtherm.rtherm3 5 4 = 4.2e-1
rtherm.rtherm4 4 3 = 8.4e-1
rtherm.rtherm5 3 2 = 8.7e-1
rtherm.rtherm6 2 tl = 1.5
}
RTHERM5
RTHERM2
RTHERM1
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM6
CTHERM4
HUFA76407D3, HUFA76407D3S Rev. B