HUFA76407D3S Fairchild Semiconductor, HUFA76407D3S Datasheet - Page 5

• Manufacturer Part Number: HUFA76407D3S
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76407D3S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
1000
100
150
100
10
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
50
1.2
1.0
0.8
0.6
0
0.1
-80
0
C
V
V
GS
OSS
GS
JUNCTION TEMPERATURE
R
-40
= 4.5V, V
GS
= 0V, f = 1MHz
≅ C
V
, GATE TO SOURCE RESISTANCE (Ω)
10
DS
DS
T
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
+ C
DD
0
GD
1.0
= 30V, I
20
40
D
= 6A
80
30
V
GS
C
(Continued)
= V
ISS
120
10
C
RSS
DS
= C
o
C)
, I
40
GS
= C
D
160
= 250µA
+ C
GD
t
d(OFF)
t
d(ON)
t
r
t
GD
f
200
60
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
10
8
6
4
2
0
80
60
40
20
0
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
0
0
1.2
1.1
1.0
0.9
V
-80
DD
V
GS
= 30V
I
D
VOLTAGE vs JUNCTION TEMPERATURE
GATE CURRENT
R
= 10V, V
= 250µA
GS
-40
2
10
, GATE TO SOURCE RESISTANCE (Ω)
t
t
T
f
d(OFF)
DD
J
, JUNCTION TEMPERATURE (
Q
= 30V, I
0
g
, GATE CHARGE (nC)
20
4
D
40
= 12A
HUFA76407D3, HUFA76407D3S Rev. B
WAVEFORMS IN
DESCENDING ORDER:
80
30
6
I
I
I
D
D
D
= 12A
= 5A
= 3A
120
o
C)
40
8
160
t
d(ON)
t
r
200
10
50