FDS6690AS Fairchild Semiconductor, FDS6690AS Datasheet
FDS6690AS
Specifications of FDS6690AS
Available stocks
Related parts for FDS6690AS
FDS6690AS Summary of contents
Page 1
... FDS6690AS 30V N-Channel PowerTrench General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDS6690AS DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology ...
Page 2
... Test Conditions Min mA, Referenced to 25° ± mA, Referenced to 25° =10A, T =125° 1.0 MHz mV 1.0 MHz Ω GEN Ω 4 GEN Typ Max Units mV/°C µA 500 ±100 –4 mV/° mΩ 910 pF 270 pF 100 pF Ω 2 2.3 nC 3.0 nC FDS6690AS Rev A2 (X) ...
Page 3
... TA = 25°C unless otherwise noted Test Conditions 3 10A 300 A/µ determined by the user's board design. θCA b) 105°/W when 2 2 mounted on a .04 in pad copper Min Typ Max 3.5 0.6 0.7 (Note (Note 3) c) 125°/W when mounted on a minimum pad. FDS6690AS Rev A2 (X) Units ...
Page 4
... C 0.01 0.001 3 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6690AS Rev A2 ( 0.8 ...
Page 5
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 125 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDS6690AS Rev A2(X) 30 1000 ...
Page 6
... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6690AS. 10nS/DIV Figure 12. FDS6690AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A) ...
Page 7
... Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 19. Switching Time Test Circuit + Figure 16. Unclamped Inductive Waveforms + 10V DUT Charge, (nC) Figure 18. Gate Charge Waveform d(ON 90 DUT 50% 10% 0V Figure 20. Switching Time Waveforms BV DSS G(TOT OFF t d(OFF 90% 10% 10% 90% 50% Pulse Width FDS6690AS Rev A2(X) ...
Page 8
... Fairchild Semiconductor. The datasheet is for reference information only. ® The Power Franchise tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ Definition Rev. I34 FDS6690AS Rev.A2(X) ...