FDS6690AS Fairchild Semiconductor, FDS6690AS Datasheet - Page 5

• Manufacturer Part Number: FDS6690AS
• Description: MOSFET N-CH 30V 10A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6690AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 45 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
I
D
=10A
0.001
SINGLE PULSE
R
R
0.01
DS(ON)
θ JA
0.1
V
T
0.0001
1
GS
A
= 125
3
= 25
= 10V
LIMIT
o
o
C
C/W
V
DS
6
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
0.05
Q
0.02
V
1
0.01
g
DS
, GATE CHARGE (nC)
= 10V
DC
SINGLE PULSE
0.001
9
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10s
1s
15V
Figure 11. Transient Thermal Response Curve.
100ms
12
10ms
20V
1ms
10
15
0.01
100 µ s
18
100
21
0.1
t
1
, TIME (sec)
1400
1200
1000
50
40
30
20
10
800
600
400
200
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
C
rss
0.01
5
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
C
t
1
oss
, TIME (sec)
1
15
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
- T
θJA
100
(t) = r(t) * R
10
A
t
= 125 °C/W
1
20
= P * R
t
2
C
SINGLE PULSE
R
iss
θ JA
T
A
= 125°C/W
θJA
= 25°C
100
θJA
1
FDS6690AS Rev A2(X)
(t)
25
/ t
2
V
f = 1MHz
GS
1000
= 0 V
1000
30