FDS6690AS Fairchild Semiconductor, FDS6690AS Datasheet - Page 4

• Manufacturer Part Number: FDS6690AS
• Description: MOSFET N-CH 30V 10A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6690AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 45 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
1.45
1.15
0.85
1.6
1.3
0.7
1
0
Figure 3. On-Resistance Variation with
1
Figure 1. On-Region Characteristics.
V
-50
V
DS
Figure 5. Transfer Characteristics.
6.0V
GS
= 5V
= 10V
V
I
GS
D
1.5
-25
= 10A
= 10V
V
0.5
GS
V
DS
T
, GATE TO SOURCE VOLTAGE (V)
J
0
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
2
T
4.5V
A
= 125
4.0V
25
o
C
2.5
1
50
25
3.0V
o
C
75
3
-55
1.5
100
o
o
C)
C
3.5
2.5V
125
150
2
4
Figure 6. Body Diode Forward Voltage Variation
0.001
0.06
0.05
0.04
0.03
0.02
0.01
0.01
0.1
10
0
2.2
1.8
1.4
0.6
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
0
0
T
V
V
Drain Current and Gate Voltage.
T
A
GS
GS
A
= 25
= 125
= 0V
= 4.0V
3.5V
Gate-to-Source Voltage.
o
C
V
o
C
SD
10
V
, BODY DIODE FORWARD VOLTAGE (V)
0.2
4
GS
4.0V
, GATE TO SOURCE VOLTAGE (V)
T
I
25
D
A
, DRAIN CURRENT (A)
= 125
o
4.5V
C
20
o
C
0.4
6
-55
5.0V
o
C
30
6.0V
0.6
8
40
FDS6690AS Rev A2 (X)
I
D
10V
= 5A
0.8
50
10