SIA443DJ-T1-GE3 Vishay, SIA443DJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA443DJ-T1-GE3
• Description: MOSFET P-CH 20V 9A SC70-6
• Manufacturer: Vishay

Specifications of SIA443DJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 8V
• Input Capacitance (ciss) @ Vds: 750pF @ 10V
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.045 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 88mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiA443DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.9
0.8
0.7
0.6
0.5
0.4
0.3
100
0.1
10
- 50
1
0.0
Soure-Drain Diode Forward Voltage
- 25
0.2
I
D
V
= 250 µA
SD
0
T
J
- Source-to-Drain Voltage (V)
= 150 °C
T
Threshold Voltage
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
0.01
100
T
100
0.1
10
J
1
0.1
= 25 °C
1.0
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
125
Single Pulse
T
GS
A
= 25 °C
150
1.2
V
New Product
minimum V
DS
DS(on)*
- Drain-to-Source Voltage (V)
1
GS
at which R
BVDSS
0.12
0.10
0.08
0.06
0.04
0.02
10
DS(on)
30
25
20
15
10
5
0
0.001
0
is specified
100 µs
10 ms
100 ms
1 s
10 s
On-Resistance vs. Gate-to-Source Voltage
1 ms
DC
Single Pulse Power, Junction-to-Ambient
0.01
1
V
100
GS
0.1
- Gate-to-Source Voltage (V)
2
25 °C
Time (s)
1
S-80435-Rev. B, 03-Mar-08
Document Number: 74474
3
10
I
D
4
100
= 4.7 A
1000
5