SIA443DJ-T1-GE3 Vishay, SIA443DJ-T1-GE3 Datasheet - Page 5

MOSFET P-CH 20V 9A SC70-6

SIA443DJ-T1-GE3

Manufacturer Part Number
SIA443DJ-T1-GE3
Description
MOSFET P-CH 20V 9A SC70-6
Manufacturer
Vishay
Datasheet

Specifications of SIA443DJ-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 8V
Input Capacitance (ciss) @ Vds
750pF @ 10V
Power - Max
15W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.045 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
14 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.7 A
Power Dissipation
3300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
88mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74474
S-80435-Rev. B, 03-Mar-08
20
15
10
5
0
0
Package Limited
25
T
D
C
is based on T
50
- Case Temperature (°C)
Current Derating*
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
20
15
10
5
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA443DJ
www.vishay.com
125
150
5

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