FQB8P10TM Fairchild Semiconductor, FQB8P10TM Datasheet - Page 4

• Manufacturer Part Number: FQB8P10TM
• Description: MOSFET P-CH 100V 8A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB8P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 3.75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
1 0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
0
1 0
C
J
= 175
= 25
10
- 5
1
0 . 0 1
0 . 0 2
D = 0 . 5
0 . 0 5
o
0 . 2
0 . 1
DS(on)
C
o
C
50
DC
Figure 11. Transient Thermal Response Curve
10 ms
1 0
100
(Continued)
s in g le p u ls e
- 4
o
1 ms
C]
※ Notes :
1. V
2. I
t
100 s
1
D
GS
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
= -250 μ A
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
-100
25
※ N o te s :
1 . Z
2 . D u ty F a c to r, D = t
3 . T
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
- 1
θ J C
J M
P
-50
DM
50
- T
(t) = 2 .3 1 ℃ /W M a x .
C
= P
vs. Case Temperature
T
D M
vs. Temperature
J
T
t
, Junction Temperature [
1
C
* Z
75
t
0
, Case Temperature [ ℃ ]
1 0
2
1
θ J C
/t
2
0
(t)
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -4.0 A
= -10 V
Rev. B, August 2002
200
175