FQB8P10TM Fairchild Semiconductor, FQB8P10TM Datasheet - Page 7

• Manufacturer Part Number: FQB8P10TM
• Description: MOSFET P-CH 100V 8A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB8P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 3.75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Package Dimensions
1.27
2.54 TYP
0.10
10.00
9.90
0.20
0.20
2.54 TYP
0.80
D
0.10
2
-PAK
10.00
(2XR0.45)
4.50
(8.00)
(4.40)
0.20
0.20
2.40
0.10
1.30
0.80
0.50
Dimensions in Millimeters
+0.10
–0.05
0.20
0.15
+0.10
–0.05
0.10
Rev. B, August 2002