FQB8P10TM Fairchild Semiconductor, FQB8P10TM Datasheet - Page 5

• Manufacturer Part Number: FQB8P10TM
• Description: MOSFET P-CH 100V 8A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB8P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 3.75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
-10V
-10V
-10V
-10V
12V
12V
t
t
p
p
-3mA
-3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
V
V
I
I
I
DS
DS
D
D
D
Resistive Switching Test Circuit & Waveforms
DS
DS
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
L
L L
R
R
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
-10V
-10V
V
V
V
V
DSS
DSS
I
I
V
V
GS
GS
V
V
DD
DD
AS
AS
GS
GS
DS
DS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
L I
L I
L I
on
on
I
I
D
D
t
t
r
r
AS
AS
AS
(t)
(t)
t
t
2
2
2
Q
Q
p
p
Q
Q
g
g
gd
gd
--------------------
--------------------
Charge
Charge
BV
BV
BV
BV
DSS
DSS
DSS
DSS
- V
- V
t
t
d(off)
d(off)
DD
DD
t
t
Time
Time
off
off
t
t
f
f
Rev. B, August 2002
V
V
DS
DS
(t)
(t)