NDS9407 Fairchild Semiconductor, NDS9407 Datasheet - Page 2
![MOSFET P-CH 60V 3A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
NDS9407
Manufacturer Part Number
NDS9407
Description
MOSFET P-CH 60V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.NDS9407.pdf
(5 pages)
Specifications of NDS9407
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
732pF @ 30V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
78 m Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9407TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
90 000
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
2 746
Part Number:
NDS9407
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS9407-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
t
Q
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
rr
S
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
rr
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
(Note 2)
(Note 2)
CA
2
is determined by the user's board design.
V
I
V
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
I
d
V
V
V
T
D
D
F
iF
A
GS
DS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –3.0 A,
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
/d
= 25°C unless otherwise noted
= –10 V, I
= –48 V,
= –48 V, V
= V
= –15 V,
= –30 V,
= –30 V,
= 0 V,
= 20 V,
= –20 V,
= –10 V,
= –4.5 V,
= –10 V,
= –30 V,
= –10 V,
= –10 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
b) 105°C/W when
,
mounted on a .04 in
pad of 2 oz copper
I
D
S
GS
= –3.0 A, T
= –2.1 A
I
V
V
V
I
I
I
V
I
V
I
R
I
D
D
D
D
D
D
D
= 0V, T
GS
DS
DS
DS
GEN
GS
= –250 A
= –250 A
= –3.0 A
= –1.6 A
= –3.0 A
= –1 A,
= –3.0 A,
= 0 V
= 0 V
= –5 V
= 0 V
= 0 V,
= 6
J
2
(Note 2)
= 55 C
J
=125 C
Min Typ
–60
–12
–1
–1.6
–0.8
–45
122
732
2.2
3.3
78
99
86
38
11
10
10
24
66
16
8
4
8
c) 125°C/W when mounted
on a minimum pad.
Max Units
–100
–2.1
–1.2
–10
100
150
240
250
–1
–3
16
20
20
20
22
NDS9407 Rev B1(W)
mV/ C
mV/ C
m
nA
nA
pF
pF
pF
nS
nC
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A
V
A