NDS9407 Fairchild Semiconductor, NDS9407 Datasheet - Page 3
![MOSFET P-CH 60V 3A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
NDS9407
Manufacturer Part Number
NDS9407
Description
MOSFET P-CH 60V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.NDS9407.pdf
(5 pages)
Specifications of NDS9407
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
732pF @ 30V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
78 m Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9407TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
90 000
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
2 746
Part Number:
NDS9407
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS9407-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
1.8
1.6
1.4
1.2
0.8
0.6
20
16
12
Figure 3. On-Resistance Variation with
1
10
8
4
0
8
6
4
2
0
Figure 1. On-Region Characteristics.
-50
0
1
Figure 5. Transfer Characteristics.
V
GS
I
D
-25
= -3A
= -10V
V
V
GS
DS
1.5
= -10V
1
= -10V
0
-V
T
-V
DS
J
GS
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, GATE TO SOURCE VOLTAGE (V)
25
-6.0V
2
2
-4.5V
50
2.5
3
75
T
-4.0V
A
= -55
100
3
4
o
C
o
C)
125
125
-3.5V
3.5
o
C
5
150
25
-3.0V
o
C
175
4
6
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
Figure 2. On-Resistance Variation with
0.25
0.15
0.05
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.3
0.2
0.1
0.1
10
2
1
1
0
0
2
Drain Current and Gate Voltage.
V
V
GS
GS
T
=0V
=-3.0V
A
Gate-to-Source Voltage.
= 25
0.2
-V
o
SD
4
-V
C
, BODY DIODE FORWARD VOLTAGE (V)
GS
-3.5V
4
, GATE TO SOURCE VOLTAGE (V)
T
-I
T
0.4
A
D
A
= 125
-4.0V
, DRAIN CURRENT (A)
= 125
8
o
C
o
C
-4.5V
0.6
6
25
o
12
C
-6.0V
0.8
-55
o
8
C
-10V
16
I
D
NDS9407 Rev B1(W)
= -1.5A
1
10
1.2
20