NDS9407 Fairchild Semiconductor, NDS9407 Datasheet - Page 4
![MOSFET P-CH 60V 3A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
NDS9407
Manufacturer Part Number
NDS9407
Description
MOSFET P-CH 60V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.NDS9407.pdf
(5 pages)
Specifications of NDS9407
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
732pF @ 30V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
78 m Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9407TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
90 000
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
2 746
Part Number:
NDS9407
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS9407-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
0.01
100
10
0.1
10
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
1
0.001
0.1
0
Figure 7. Gate Charge Characteristics.
0.01
0.1
R
0.0001
1
DS(ON)
SINGLE PULSE
R
I
D
V
JA
= -3A
T
GS
2
A
= 125
LIMIT
= 25
= -10V
D = 0.5
0.2
0.1
o
o
C
C/W
0.05
0.02
4
-V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
6
0.001
SINGLE PULSE
8
Figure 11. Transient Thermal Response Curve.
DC
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10s
10
V
DS
10
1s
= -20V
100ms
0.01
12
10ms
-40V
1ms
14
100 s
-30V
100
16
0.1
t
1
, TIME (sec)
1200
1000
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
RSS
0.01
10
C
-V
OSS
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
20
10
C
t
1
ISS
, TIME (sec)
30
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
JA
10
(t) = r(t) * R
40
100
A
= 125
t
1
= P * R
t
2
SINGLE PULSE
R
JA
T
o
C/W
A
= 125°C/W
100
50
= 25°C
NDS9407 Rev B1(W)
JA
1
f = 1 MHz
V
JA
(t)
/ t
GS
2
= 0 V
1000
1000
60