FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 2
![MOSFET P-CH 35V 13A DPAK](/photos/5/57/55732/fdd6637_sml.jpg)
FDD6637
Manufacturer Part Number
FDD6637
Description
MOSFET P-CH 35V 13A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD6637.pdf
(8 pages)
Specifications of FDD6637
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.6 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0116 Ohm @ 10 V
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6637TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD6637
Manufacturer:
Fairchild Semiconductor
Quantity:
52 838
Company:
Part Number:
FDD6637
Manufacturer:
FAIRCHILD
Quantity:
1 819
Part Number:
FDD6637
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD6637 Rev. C2(W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
E
I
Off Characteristics
BV
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Q
AS
DSS
GSS
d(on)
r
d(off)
f
FS
AS
GS(th)
DS(on)
iss
oss
rss
G
g
g
gs
gd
DSS
Drain-Source Avalanche Energy
(Single Pulse)
Drain-Source Avalanche Current
Drain–Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge, V
Total Gate Charge, V
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
GS
GS
(Note 2)
= –10V
= –5V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
f = 1.0 MHz
V
V
V
T
DD
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
A
= 25°C unless otherwise noted
= 0 V,
= –28 V,
= 25 V,
= V
= –10 V,
= –4.5 V,
= –10 V, I
=–5 V,
= –20 V,
= –10 V,
= – 20 V, I
= -35 V, I
= –20 V,
Test Conditions
GS
, I
D
= –250 A
D
D
= -11 A, L=1mH
I
V
D
D
= –14 A, T
I
V
I
I
D
D
D
V
GS
I
R
= –14 A
= –14 A
DS
D
= –250 A
= –14 A
= –11 A
GS
GEN
= 0 V
= –1 A,
= 0 V
= 0 V,
= 6
J
=125 C
Min
–35
–1
Typ
2370
–1.6
14.4
14.7
–14
470
250
9.7
3.6
61
35
18
10
62
36
45
25
10
7
www.fairchildsemi.com
Max Units
11.6
100
–1
100
–3
18
19
32
20
58
63
35
m
mJ
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
V
V
S
A