FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 3
![MOSFET P-CH 35V 13A DPAK](/photos/5/57/55732/fdd6637_sml.jpg)
FDD6637
Manufacturer Part Number
FDD6637
Description
MOSFET P-CH 35V 13A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD6637.pdf
(8 pages)
Specifications of FDD6637
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.6 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0116 Ohm @ 10 V
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6637TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD6637
Manufacturer:
Fairchild Semiconductor
Quantity:
52 838
Company:
Part Number:
FDD6637
Manufacturer:
FAIRCHILD
Quantity:
1 819
Part Number:
FDD6637
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDD6637 Rev. C2(W)
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics
V
trr
Qrr
the drain pins. R
SD
where P
JA
is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
D
is maximum power dissipation at T
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
Parameter
R
a) R
P
DS(ON)
C
D
= 25°C and R
1in
JA
2
= 40°C/W when mounted on a
pad of 2 oz copper
CA
is determined by the user's board design.
DS(on)
T
V
IF = –14 A,
A
GS
= 25°C unless otherwise noted
is at T
= 0 V, I
Test Conditions
J(max)
S
and V
= –14 A
diF/dt = 100 A/µs
GS
= 10V. Package current limitation is 21A
(Note 2)
b) R
Min
on a minimum pad.
JA
= 96°C/W when mounted
Typ
–0.8
28
15
www.fairchildsemi.com
Max Units
–1.2
nC
ns
V