FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 3

• Manufacturer Part Number: FDD6637
• Description: MOSFET P-CH 35V 13A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6637

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2370pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0116 Ohm @ 10 V
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6637TR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDD6637 Rev. C2(W)
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics
V
trr
Qrr
the drain pins. R
SD
where P
JA
is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
D
is maximum power dissipation at T
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
Parameter
R
a) R
P
DS(ON)
C
D
= 25°C and R
1in
JA
2
= 40°C/W when mounted on a
pad of 2 oz copper
CA
is determined by the user's board design.
DS(on)
T
V
IF = –14 A,
A
GS
= 25°C unless otherwise noted
is at T
= 0 V, I
Test Conditions
J(max)
S
and V
= –14 A
diF/dt = 100 A/µs
GS
= 10V. Package current limitation is 21A
(Note 2)
b) R
Min
on a minimum pad.
JA
= 96°C/W when mounted
Typ
–0.8
28
15
www.fairchildsemi.com
Max Units
–1.2
nC
ns
V