FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 4
![MOSFET P-CH 35V 13A DPAK](/photos/5/57/55732/fdd6637_sml.jpg)
FDD6637
Manufacturer Part Number
FDD6637
Description
MOSFET P-CH 35V 13A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD6637.pdf
(8 pages)
Specifications of FDD6637
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.6 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0116 Ohm @ 10 V
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6637TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD6637
Manufacturer:
Fairchild Semiconductor
Quantity:
52 838
Company:
Part Number:
FDD6637
Manufacturer:
FAIRCHILD
Quantity:
1 819
Part Number:
FDD6637
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
FDD6637 Rev. C2(W)
100
100
80
60
40
20
80
60
40
20
1.8
1.6
1.4
1.2
0.8
0.6
0
0
Figure 3. On-Resistance Variation with
1
0
1
-50
Figure 1. On-Region Characteristics
Figure 5. Transfer Characteristics
V
V
GS
V
D S
I
D
GS
= -10V
-25
= -14A
= -5V
= -10V
-V
-V
1
2
T
GS
0
D S
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature
-6.0V
, DRAIN-SOURCE VOLTAGE (V)
25
-5.0V
2
50
3
T
A
-4.5V
= -55
75
o
C
-4.0V
o
100
3
C)
4
-3.5V
25
o
C
125
125
-3.0V
o
C
150
4
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.05
0.04
0.03
0.02
0.01
0.001
1000
0.01
100
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature
1
2
1
2
0
0
V
Drain Current and Gate Voltage
T
GS
V
A
GS
= 25
= -3.5V
= 0V
-4.0V
0.2
Gate-to-Source Voltage
T
o
-V
C
A
SD
20
= 125
-V
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
, GATE TO SOURCE VOLTAGE (V)
0.4
-4.5V
o
C
-I
D
, DRAIN CURRENT (A)
T
A
-5.0V
40
= 125
25
0.6
o
C
o
6
C
-6.0V
0.8
-55
60
o
C
-8.0V
www.fairchildsemi.com
1
8
80
I
1.2
D
-10V
= -7A
100
1.4
10