NDS8435A Fairchild Optoelectronics Group, NDS8435A Datasheet - Page 4

• Manufacturer Part Number: NDS8435A
• Description: MOSFET P-CH 30V 7.9A 8-SOIC
• Manufacturer: Fairchild Optoelectronics Group

Specifications of NDS8435A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 7.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4210279C

Typical Electrical Characteristics
-30
-24
-18
-12
-25
-20
-15
-10
-6
-5
0
0
1.6
1.4
1.2
0.8
0.6
-1
0
1
V
-50
V
GS
Figure 1. On-Region Characteristics
DS
Figure 5. Transfer Charateristics
=-10V
Figure 3. On-Resistance Variation
-6.0
= -10V
V
I
D
-0.5
-25
-1.5
GS
= -7.9A
= -10V
V
V
GS
DS
-4.5
0
T , JUNCTION TEMPERATURE (°C)
with Temperature.
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
-1
-2
-4.0
-3.5
2 5
-1.5
-2.5
5 0
-3.0
T
J
7 5
-2
-3
= -55°C
-2.5
1 0 0
-2.5
-3.5
.
125°C
.
1 2 5
25°C
-3
-4
1 5 0
2.5
1.5
0.5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
0.6
2
1
2
1
0
1
-50
0
0
with Drain Current and Gate Voltage
with Drain Current and Temperature
Figure 6. Gate Threshold Variation
V
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
V
GS
GS
-25
=-3.5V
= -10V
-5
-5
0
with Temperature
T , JUNCTION TEMPERATURE (°C)
J
I
I
-4.0
D
D
, DRAIN CURRENT (A)
25
, DRAIN CURRENT (A)
-10
-10
T = 125°C
J
-4.5
-55°C
50
25°C
-5.0
-15
-15
75
-6.0
.
I
D
1 0 0
V
-7.0
DS
=-250µA
-20
-20
= V
GS
-10
1 2 5
.
.
NDS8435A Rev.C
-25
-25
1 5 0
1