NDS8435A Fairchild Optoelectronics Group, NDS8435A Datasheet - Page 6

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NDS8435A

Manufacturer Part Number
NDS8435A
Description
MOSFET P-CH 30V 7.9A 8-SOIC
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of NDS8435A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 7.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q4210279C

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Typical Electrical and ThermalCharacteristics
Figure 13. Transconductance Variation with Drain
Figure 15. Maximum Steady- State Drain
8.5
7.5
6.5
5.5
0.005
0.002
0.001
0.05
0.02
0.01
8
7
6
5
40
32
24
16
0.5
0.2
0.1
8
0
0
0.0001
1
0
1 c
V
1 b
Current and Temperature
Current versus Copper Mounting Pad
Area.
DS
= - 10V
0.2
D = 0.5
2oz COPPER MOUNTING PAD AREA (in
-6
0.2
0.1
0.05
I , DRAIN CURRENT (A)
D
0.001
0.02
0.4
0.01
-12
Figure 17. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
Single Pulse
depending on the circuit board design.
0.6
.
-18
T = -55°C
J
0.01
125°C
25°C
4.5"x5" FR-4 Board
T
Still Air
V
2
A
G S
0.8
)
-24
= 2 5 C
= - 1 0 V
o
1a
1
-30
0.1
t , TIME (sec)
1
(continued)
2.5
1.5
0.5
Figure 16. Maximum Safe Operating Area
0.05
0.01
Figure 14. SO-8 Maximum Steady-State Power
2
1
0.5
0.1
5 0
3 0
1 0
0
5
2
1
0.1
1c
1 b
Dissipation versus Copper Mounting Pad Area.
0.2
.
R
A
1
SINGLE PULSE
J A
0.2
2oz COPPER MOUNTING PAD AREA (in
V
T
GS
= See Note 1c
A
- V
0.5
= 25°C
= -10V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.4
1
P(pk)
T - T
10
2
R
Duty Cycle, D = t /t
J
R
JA
JA
t
1
A
0.6
(t) = r(t) * R
t
= P * R
= See note 1c
2
5
4.5"x5" FR-4 Board
T
Still Air
1 0
A
JA
1
= 2 5 C
0.8
2
2
)
(t)
2
o
.
100
JA
2 0
NDS8435A Rev.C
3 0
1a
1
300
5 0
1

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