HUFA75429D3ST Fairchild Semiconductor, HUFA75429D3ST Datasheet - Page 4

• Manufacturer Part Number: HUFA75429D3ST
• Description: MOSFET N-CH 60V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75429D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 33 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
500
100
50
40
30
20
10
10
Figure 9. Normalized Drain to Source On
0
1
2.5
2.0
1.5
1.0
0.5
3
1
Resistance vs Junction Temperature
-80
Figure 7. Transfer Characteristics
T
T
SINGLE PULSE
T
OPERATION IN THIS
LIMITED BY r
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
J
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
J
DD
= MAX RATED
= 25
= 25
AREA MAY BE
= 15V
-40
o
o
C
C
V
V
T
DS
GS
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
0
4
T
J
= 175
40
10
T
o
J
C
= -55
80
o
T
C
A
V
5
GS
= 25°C unless otherwise noted
120
o
= 10V, I
C)
100 s
10ms
1ms
160
D
= 20A
100
200
6
Figure 10. Normalized Gate Threshold Voltage vs
500
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515.
Figure 6. Unclamped Inductive Switching
10
50
40
30
20
10
1
0
1.2
1.0
0.8
0.6
0.4
0.01
0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R
t
AV
AV
STARTING T
V
= (L)(I
= (L/R)ln[(I
GS
0
= 7V
-40
V
Junction Temperature
AS
DS
T
)/(1.3*RATED BV
t
J
0.1
0.5
, DRAIN TO SOURCE VOLTAGE (V)
AV
, JUNCTION TEMPERATURE (
J
AS
, TIME IN AVALANCHE (ms)
= 150
*R)/(1.3*RATED BV
0
V
GS
Capability
o
= 10V
C
40
1.0
DSS
1
STARTING T
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
- V
80
DD
DSS
V
GS
)
- V
= V
120
DD
o
10
1.5
DS
J
C)
) +1]
= 25
, I
V
V
D
V
GS
GS
T
GS
= 250 A
160
o
C
C
= 4.5V
= 6V
= 25
= 5V
o
C
100
200
2.0
Rev. A1