HUFA75429D3ST Fairchild Semiconductor, HUFA75429D3ST Datasheet - Page 6

• Manufacturer Part Number: HUFA75429D3ST
• Description: MOSFET N-CH 60V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75429D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 33 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
V
GS
I
g(REF)
Figure 18. Switching Time Test Circuit
Figure 16. Gate Charge Test Circuit
V
GS
R
GS
V
GS
V
DS
V
DUT
DS
R
DUT
L
R
L
(Continued)
-
+
V
+
-
DD
V
DD
I
0
0
V
V
V
g(REF)
0
0
DD
GS
V
DS
10%
GS
V
Figure 19. Switching Time Waveforms
= 2V
GS
Figure 17. Gate Charge Waveforms
t
d(ON)
90%
Q
gs
Q
50%
t
ON
g(TH)
10%
t
r
Q
PULSE WIDTH
Q
V
g(10)
DS
gd
Q
g(TOT)
V
GS
=10V
t
d(OFF)
90%
t
OFF
50%
t
V
f
10%
GS
= 20V
90%
Rev. A1