HUFA75429D3ST Fairchild Semiconductor, HUFA75429D3ST Datasheet - Page 9

• Manufacturer Part Number: HUFA75429D3ST
• Description: MOSFET N-CH 60V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75429D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 33 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
SABER Electrical Model
REV February 2002
template HUFA75429D3S n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=1.6e-12,nl=1.02,rs=8.1e-3,trs1=3e-3,trs2=2e-6,cjo=1.43e-9,tt=3e-8,m=0.53,xti=5.5)
dp..model dbreakmod = (rs=2e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.4e-9,isl=10e-30,nl=10,m=0.79)
m..model mmedmod = (type=_n,vto=3,kp=4.5,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=3.6,kp=40,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.66,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-8,voff=-3.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-8)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.1,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1.1)
c.ca n12 n8 = 1.9e-9
c.cb n15 n14 = 1.9e-9
c.cin n6 n8 = 9.7e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 65
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 3.54e-9
l.ldrain n2 n5 = 1e-9
l.lsource n3 n7 = 2.21e-9
res.rlgate n1 n9 = 35.4
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 22.1
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.2e-3,tc2=1e-7
res.rdrain n50 n16 = 6.5e-3, tc1=1.2e-2,tc2=2.3e-5
res.rgate n9 n20 = 2
res.rslc1 n5 n51 = 1e-6, tc1=8e-3,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.1e-2, tc1=1e-3,tc2=8e-6
res.rvthres n22 n8 = 1, tc1=-2e-3,tc2=-1e-5
res.rvtemp n18 n19 = 1, tc1=-3e-3,tc2=-2e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/100))** 5))}
}
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
6
8
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
5
MSTRO
14
51
21
RDRAIN
RSLC1
50
ISCL
16
8
MMED
8
RSOURCE
DBREAK
IT
MWEAK
17
EBREAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
RLDRAIN
LSOURCE
VBAT
LDRAIN
DBODY
SOURCE
DRAIN
2
3
Rev. A1