FDB20AN06A0 Fairchild Semiconductor, FDB20AN06A0 Datasheet
FDB20AN06A0
Specifications of FDB20AN06A0
Related parts for FDB20AN06A0
FDB20AN06A0 Summary of contents
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... SOURCE DRAIN GATE SOURCE TO-263AB FDB SERIES T = 25°C unless otherwise noted C Parameter 10V 10V 10V C/W) θ copper pad area certification. June 2003 D G DRAIN (FLANGE) S Ratings Units 60 V ± Figure 0. -55 to 175 C o 1. C/W FDB20AN06A0 / FDP20AN06A0 Rev. B ...
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... 45A, dI /dt = 100A/µ 45A, dI /dt = 100A/µ Tape Width Quantity 24mm 800 units N/A 50 units Min Typ Max 150 250 C ±100 - - 0.017 0.020 - 0.039 0.047 - 950 - - 185 - - 2.6 = 30V DD = 45A - 1.0mA - 4 164 - 1. 1 FDB20AN06A0 / FDP20AN06A0 Rev. B Units V µ Ω ...
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... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB20AN06A0 / FDP20AN06A0 Rev. B 175 ...
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... Resistance vs Junction Temperature = (L)(I )/(1.3*RATED DSS DD = (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability V = 10V 20V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE ( 10V 45A 120 160 JUNCTION TEMPERATURE ( C) J FDB20AN06A0 / FDP20AN06A0 Rev 200 ...
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... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS ≅ OSS Figure 14. Gate Charge Waveforms for Constant I = 250µ 120 160 JUNCTION TEMPERATURE ( 30V WAVEFORMS IN DESCENDING ORDER 45A GATE CHARGE (nC) g Gate Current FDB20AN06A0 / FDP20AN06A0 Rev. B 200 15 ...
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... Figure 19. Switching Time Test Circuit ©2003 Fairchild Semiconductor Corporation DUT 0.01Ω Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB20AN06A0 / FDP20AN06A0 Rev 10V 90% ...
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... C/W) θ never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ.2 θ 26.51+ 128/(1.69+Area) EQ.3 θJA 1 (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB20AN06A0 / FDP20AN06A0 Rev ...
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... DPLCAP RSLC2 RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB20AN06A0 / FDP20AN06A0 Rev ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDB20AN06A0 / FDP20AN06A0 Rev. B DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDB20AN06A0 / FDP20AN06A0 Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...