FDB20AN06A0 Fairchild Semiconductor, FDB20AN06A0 Datasheet - Page 4

• Manufacturer Part Number: FDB20AN06A0
• Description: MOSFET N-CH 60V 45A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB20AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Figure 5. Forward Bias Safe Operating Area
100
17.5
17.0
16.5
16.0
15.5
1000
80
60
40
20
100
0.1
0
10
1
4
0
1
Figure 7. Transfer Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
T
T
SINGLE PULSE
DD
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
OPERATION IN THIS
LIMITED BY r
J
C
J
= MAX RATED
= 25
= 15V
= 25
AREA MAY BE
o
o
C
5
V
C
V
10
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
I
D
T
, DRAIN CURRENT (A)
Current
J
= -55
20
6
o
C
10
30
7
T
DC
C
= 25°C unless otherwise noted
10ms
1ms
V
100µs
10µs
GS
T
40
J
8
= 10V
= 175
o
C
100
50
9
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
300
80
60
40
20
100
2.5
2.0
1.5
1.0
0.5
10
0
1
Resistance vs Junction Temperature
0.01
0
-80
Figure 8. Saturation Characteristics
If R = 0
t
If R ≠ 0
t
AV
AV
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
-40
AS
V
DS
T
)/(1.3*RATED BV
V
J
STARTING T
GS
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
t
AS
AV
0
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
= 20V
V
Capability
0.1
1
GS
= 5V
40
J
= 150
DSS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
- V
o
C
STARTING T
FDB20AN06A0 / FDP20AN06A0 Rev. B
DD
DSS
)
V
1
2
GS
- V
120
DD
V
= 10V, I
o
GS
C)
) +1]
J
= 10V
V
= 25
V
T
GS
160
GS
D
C
= 45A
= 25
= 6V
o
= 7V
C
o
C
200
10
3