IRFR420APBF Vishay, IRFR420APBF Datasheet - Page 2
![MOSFET N-CH 500V 3.3A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR420APBF
Manufacturer Part Number
IRFR420APBF
Description
MOSFET N-CH 500V 3.3A DPAK
Manufacturer
Vishay
Specifications of IRFR420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFR420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR420APBF
Manufacturer:
IR
Quantity:
150 000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
C
C
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
thCS
DS
oss
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
V
GS
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
J
Reference to 25 °C, I
= 10 V
= 10 V
= 0 V
= 21 Ω, R
= 400 V, V
= 25 °C, I
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DD
0.50
DS
DS
GS
oss
DS
-
-
= 250 V, I
F
= 500 V, V
= V
= 0 V, I
V
= 50 V, I
while V
= 2.5 A, dI/dt = 100 A/μs
V
V
GS
DS
V
D
S
V
GS
GS
I
GS
DS
D
DS
= 97 Ω, see fig. 10
= 2.5 A, V
= ± 30 V
V
= 25 V,
, I
= 2.5 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
= 400 V, f = 1.0 MHz
DS
= 1.0 V, f = 1.0 MHz
D
D
DS
D
= 250 μA
D
= 250 μA
= 0 V to 400 V
I
GS
D
= 1.5 A
is rising from 0 %to 80 % V
= 2.5 A,
= 1.5 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
= 0 V
= 400 V,
b
MAX.
b
b
b
D
S
1.5
c
62
-
b
MIN.
500
2.0
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1135-Rev. B, 10-May-10
DS
Document Number: 91274
.
TYP.
0.60
340
490
330
760
2.7
8.1
53
15
28
12
16
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1140
250
500
4.5
3.0
4.3
8.5
3.3
1.6
S
25
17
10
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
pF
ns
ns
Ω
S
A
V
V
V