IRFR420APBF Vishay, IRFR420APBF Datasheet - Page 3
![MOSFET N-CH 500V 3.3A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR420APBF
Manufacturer Part Number
IRFR420APBF
Description
MOSFET N-CH 500V 3.3A DPAK
Manufacturer
Vishay
Specifications of IRFR420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFR420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR420APBF
Manufacturer:
IR
Quantity:
150 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91274
S10-1135-Rev. B, 10-May-10
0.01
0.1
0.1
10
10
1
1
0.1
1
TOP
BOTTOM
TOP
BOTTOM
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
10
4.5V
20μs PULSE WIDTH
T = 25 C
20μs PULSE WIDTH
T = 150 C
J
J
4.5V
10
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
°
°
100
100
0.01
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
4.0
-60 -40 -20
I =
Fig. 3 - Typical Transfer Characteristics
D
T = 150 C
2.5A
J
V
T , Junction Temperature ( C)
5.0
GS
J
, Gate-to-Source Voltage (V)
0
°
T = 25 C
J
20 40 60
6.0
°
Vishay Siliconix
V
20μs PULSE WIDTH
7.0
DS
80 100 120 140 160
= 50V
www.vishay.com
V
8.0
°
GS
=
10V
9.0
3