IRF840B Fairchild Semiconductor, IRF840B Datasheet

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IRF840B

Manufacturer Part Number
IRF840B
Description
MOSFET N-CH 500V 8A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRF840B

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
134W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2005 Fairchild Semiconductor Corporation
IRF840B/IRFS840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 8.0A, 500V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
IRFS Series
IRF840B
IRF840B
1.08
0.93
62.5
DS(on)
134
8.0
5.1
0.5
32
-55 to +150
= 0.8
13.4
500
320
300
8.0
5.5
30
@V
G
IRFS840B
IRFS840B
0.35
2.86
62.5
GS
8.0
5.1
32
44
--
= 10 V
February 2005
D
S
Rev. B, February 2005
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A

Related parts for IRF840B

IRF840B Summary of contents

Page 1

... C Parameter February 2005 = 0 DS(on IRF840B IRFS840B Units 500 V 8.0 8.0 A 5.1 5 320 mJ 8.0 A 13.4 mJ 5.5 V/ns 134 44 W 1.08 0.35 W/°C -55 to +150 °C 300 °C IRF840B IRFS840B Units 0.93 2.86 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. B, February 2005 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 9.0mH 8.0A 50V 8.0A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2005 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 400 125° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C 1000 oss C 500 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2005 Fairchild Semiconductor Corporation 1 10 150 Notes : ※ 1. 250µs Pulse Test ℃ 10V GS = 20V 0 10 ※ ...

Page 4

... Limited by R DS(on Notes : 10 ※ 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF840B Case Temperature [ ] C Figure 10. Maximum Drain Current vs Case Temperature ©2005 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 250 µA 0.5 D ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for IRF840B Figure 11-2. Transient Thermal Response Curve for IRFS840B ©2005 Fairchild Semiconductor Corporation (Continued ※ θ tio ※ tio ( ℃ ( θ ( ℃ θ ( θ Rev. B, February 2005 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2005 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2005 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Mechanical Dimensions ©2005 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters Rev. B, February 2005 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2005 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. B, February 2005 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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