IRF840B Fairchild Semiconductor, IRF840B Datasheet - Page 3

• Manufacturer Part Number: IRF840B
• Description: MOSFET N-CH 500V 8A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRF840B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 134W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
500
10
3.0
2.5
2.0
1.5
1.0
0.5
10
10
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom : 5.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
5
V
V
DS
DS
10
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
C
C
C
iss
rss
oss
15
V
GS
V
= 20V
GS
= 10V
20
C
C
C
※
iss
oss
rss
1. 250µs Pulse Test
2. T
10
10
= C
= C
= C
Notes :
※
1
1
C
gs
gd
ds
Note : T
= 25 ℃
+ C
+ C
※
gd
1. V
2. f = 1 MHz
25
gd
Notes :
(C
J
GS
ds
= 25 ℃
= shorted)
= 0 V
30
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
150
Figure 2. Transfer Characteristics
o
C
5
o
Variation with Source Current
C
0.4
150 ℃
10
4
0.6
V
V
and Temperature
Q
GS
SD
15
G
V
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
25 ℃
DS
-55
V
= 400V
o
DS
C
0.8
V
= 250V
20
DS
= 100V
6
25
1.0
30
1.2
※
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µs Pulse Test
Notes :
Notes :
※
8
DS
G S
35
Note : I
= 40V
= 0V
D
1.4
= 8.0 A
40
Rev. B, February 2005
1.6
10
45