IRF840B Fairchild Semiconductor, IRF840B Datasheet - Page 5

• Manufacturer Part Number: IRF840B
• Description: MOSFET N-CH 500V 8A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRF840B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 134W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for IRFS840B
-1
-2
Figure 11-1. Transient Thermal Response Curve for IRF840B
0
1 0
-1
-2
0
1 0
-5
-5
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
0 .2
D = 0 .5
0 .0 2
0 .0 1
0 .1
0 .0 5
0 .2
0 .1
1 0
(Continued)
1 0
s in g le p u ls e
-4
s in g le p u ls e
-4
t
t
1
1
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
1 0
1 0
-3
-3
1 0
1 0
-2
-2
※
1 0
1 0
※
1 . Z
2 . D u ty F a c to r, D = t
3 . T
-1
N o te s :
1 . Z
2 . D u ty F a c to r, D = t
3 . T
-1
P
P
N o te s :
DM
θ J C
J M
DM
θ J C
J M
- T
(t) = 0 .9 3
- T
(t) = 2 .8 6
C
C
= P
= P
t
1
t
D M
1
t
1 0
D M
2
t
1 0
2
℃
* Z
℃
* Z
0
/W M a x .
0
1
θ J C
/t
/W M a x .
1
θ J C
2
/t
2
(t)
(t)
1 0
1 0
1
1
Rev. B, February 2005