IRF820SPBF Vishay, IRF820SPBF Datasheet
IRF820SPBF
Specifications of IRF820SPBF
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IRF820SPBF Summary of contents
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... Q (nC) gd Configuration D 2 PAK (TO-263 ORDERING INFORMATION 2 Package D PAK (TO-263) IRF820SPbF Lead (Pb)-free SiHF820S-E3 IRF820S SnPb SiHF820S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor e Linear Derating Factor (PCB Mount) ...
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... IRF820S, SIHF820S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91060 S-83030-Rev. A, 19-Jan-09 4 µs Pulse Width °C C 91060_03 = 25 ° µs Pulse Width T = 150 ° 91060_04 = 150 °C C IRF820S, SIHF820S Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF820S, SIHF820S Vishay Siliconix 800 MHz iss rss 600 oss ds C 400 C 200 Drain-to-Source Voltage ( 91060_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 250 100 Total Gate Charge (nC) 91060_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 91060_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91060 S-83030-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF820S, SIHF820S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF820S, SIHF820S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91060_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 500 Top ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91060. Document Number: 91060 S-83030-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...